场效应管-东芝Toshiba 2SK2698的参数翻译
低漏-源导通电阻：RDS (ON) = 0.35 Ω (typ.)
高前转导纳：|Yfs| = 11 S (typ.)
低漏电流：IDSS = 100 μA (max) (VDS = 500 V)
增强模式：Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
|
特征 |
符号 |
级别 |
单位 |
|
|
漏-源电压 |
VDSS |
500 |
V |
|
|
漏-栅电压 (RGS = 20 kΩ) |
VDGR |
500 |
V |
|
|
栅-源电压 |
VGSS |
±30 |
V |
|
|
漏电流 |
DC |
ID |
15 |
A |
|
Pulse |
IDP |
60 |
A |
|
|
漏极功耗 (Tc = 25°C) |
PD |
150 |
W |
|
|
单脉冲雪崩能量 |
EAS |
630 |
mJ |
|
|
雪崩电流 |
IAR |
15 |
A |
|
|
重复雪崩能量 |
EAR |
15 |
mJ |
|
|
通道温度 |
Tch |
150 |
°C |
|
|
储存温度范围 |
Tstg |
-55~150 |
°C |
|